Monte Carlo method for the investigation of electron diffusion in degenerate semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371865
Reference17 articles.
1. Calculation of the hot electron diffusion rate for GaAs
2. Determination of diffusion coefficients in degenerate electron gas using Monte Carlo simulation
3. Theory of fluctuations in nonequilibrium electron gas
4. Diffusion and fluctuations in a nonequilibrium electron gas with electron-electron collisions
5. Monte Carlo high-field transport in degenerate GaAs
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1. Monte Carlo method for studies of spin relaxation in degenerate electron gas: Application to monolayer graphene;Journal of Applied Physics;2017-07-28
2. Modified Monte Carlo method for study of electron transport in degenerate electron gas in the presence of electron–electron interactions, application to graphene;Journal of Computational Physics;2017-07
3. Monte Carlo study of electron transport in monolayer silicene;Semiconductor Science and Technology;2016-09-27
4. Monte Carlo studies of low-field electron transport in monolayer silicene and graphene;physica status solidi (a);2016-09-06
5. Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene;Journal of Applied Physics;2013-10-14
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