Asymmetric luminescence line shape and exciton energy relaxation in Zn1−x−yMgxCdySe epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125366
Reference9 articles.
1. Red–green–blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP
2. Optimized growth of lattice-matched ZnCdSe epilayers on InP substrates
3. Defect reduction of Zn[sub x]Cd[sub y]Mg[sub 1−x−y]Se based structures grown on InP by using Zn irradiation of the III–V surface
4. Dynamics of recombination-enhanced defect reaction in a ZnCdSe single quantum well
5. Exciton mobility edge in CdS1−xSex solid solutions
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1. Contactless electroreflectance and photoluminescence characterization of Zn0.68Be0.06Mg0.26Se crystalline alloys;Journal of Alloys and Compounds;2010-02
2. Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys;Semiconductors;2006-05
3. Photoluminescence of ZnxCdyMg1−x−ySe alloys as a manifestation of the breakdown of “common-anion rule”;Journal of Applied Physics;2003-12
4. Be-chalcogenide alloys for improved R-G-B LEDs: BexZnyCd1-x-ySe on InP;PHYS STATUS SOLIDI B;2002
5. Be-Chalcogenide Alloys for Improved R-G-B LEDs: BexZnyCd1-x-ySe on InP;physica status solidi (b);2002-01
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