Nondestructive measurement and high-precision evaluation of the electrical conductivity of doped GaAs wafers using microwaves-Reference-Cited by-同舟云学术

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Nondestructive measurement and high-precision evaluation of the electrical conductivity of doped GaAs wafers using microwaves

Published:2010-12 Issue:12 Volume:81 Page:124701
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Liu Linsheng,Ju Yang

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3518038

Reference17 articles.

1. Temperature dependence of the thermal diffusivity of GaAs in the 100–305 K range measured by the pulsed photothermal displacement technique

2. Contactless Measurements of Resistivity of Semiconductor Wafers Employing Single-Post and Split-Post Dielectric-Resonator Techniques

3. Frequency dependence of the thermal conductivity of semiconductor alloys

4. An economical ultrahigh‐vacuum probe of conductivity and mobility

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