Passivation of ion‐beam damage in metal‐oxide‐silicon structures by room‐temperature hydrogenation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106789
Reference7 articles.
1. Static technique for precise measurements of surface potential and interface state density in MOS structures
2. Ion implantation in semiconductors—Part II: Damage production and annealing
3. Ion beam modification of the dielectric properties of thin silicon dioxide films
4. Ion-dosage-dependent room-temperature hysteresis in MOS structures with thin oxides
5. Suppression of acceptor deactivation in silicon by argon‐ion implantation damage
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sputter-Metallization-Induced Electronic Defects in Thermal SiO2;physica status solidi (a);2001-10
2. Charged Defects in Wet SiO2/Si Structure Modified by RF Oxygen Plasma Treatment;physica status solidi (a);1999-02
3. Influence of backsurface argon bombardment on SiO2–Si interface characteristics;Applied Physics Letters;1996-05-06
4. Atomic hydrogen passivation of ion implantation damage at Si-SiO2 interfaces;Ion Beam Modification of Materials;1996
5. Investigation of room‐temperature ion beam hydrogenation for the removal of traps in silicon ion beam damaged metal‐oxide‐silicon structures;Journal of Applied Physics;1993-03
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