Geometrically induced electron-electron interaction in semiconductor nanowires-Reference-Cited by-同舟云学术

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Geometrically induced electron-electron interaction in semiconductor nanowires

Published:2016-09-19 Issue:12 Volume:109 Page:123101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pinto N.¹²^ORCID,Rezvani S. J.¹²³,Favre L.⁴,Berbezier I.⁴,Fretto M.³,Boarino L.³

Affiliation:

1. Scuola di Scienze e Tecnologie, sezione di Fisica, via Madonna delle Carceri 9, 62032 Camerino, Italy

2. INFN sezione di Perugia, via Pascoli, 06123 Perugia, Italy

3. Istituto Nazionale di Ricerche Metrologiche, strada delle Cacce, 91, 10135 Torino, Italy

4. IM2NP-UMR CNRS, Aix-Marseille Universite, 13397 Marseille, France

Funder

FAR 2012

Compagnia di San Paolo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962893

Reference42 articles.

1. Compensation of n‐type GaN

2. Effect of deep levels on semiconductor carrier concentrations in the case of "strong" compensation

3. The Coulomb gap: The view of an experimenter

4. B. Shlowskii and A. Efros ,Electronic Properties of Doped Semiconductors( Springer-Verlag, 1984), pp. 202–210.

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