Spin rectification induced by spin Hall magnetoresistance at room temperature-Reference-Cited by-同舟云学术

Spin rectification induced by spin Hall magnetoresistance at room temperature

Published:2016-09-12 Issue:11 Volume:109 Page:112406
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang P.¹,Jiang S. W.¹,Luan Z. Z.¹^ORCID,Zhou L. F.¹,Ding H. F.¹,Zhou Y.¹,Tao X. D.¹,Wu D.¹^ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures, Department of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China

Funder

National Basic Research Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962895

Reference32 articles.

1. Spin Hall Effects in Metals

2. Conversion of spin current into charge current at room temperature: Inverse spin-Hall effect

3. Inverse spin-Hall effect induced by spin pumping in metallic system

4. Realization of a Room-Temperature Spin Dynamo: The Spin Rectification Effect

5. Spin rectification enabled by anomalous Hall effect

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