Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368208
Reference17 articles.
1. Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminals
2. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
3. 1.7-ps, microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodes
4. In0.53Ga0.47As/AlAs resonant tunnelling diodes with switching time of 1.5 ps
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