Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy-Reference-Cited by-同舟云学术

Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

Published:2011-11-07 Issue:19 Volume:99 Page:192509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kubota Takahide,Araidai Masaaki,Mizukami Shigemi,Zhang Xianmin,Ma Qinli,Naganuma Hiroshi,Oogane Mikihiko,Ando Yasuo,Tsukada Masaru,Miyazaki Terunobu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3659484

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5. High Magnetoresistance Ratio and Low Resistance–Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes

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