Study of pristine and degraded blue quantum dot light-emitting diodes by transient electroluminescence measurements

Author:

Lin Wenxin1ORCID,Huang Jiangxia1ORCID,Li Shuxin1ORCID,Blom Paul W. M.2ORCID,Feng Haonan1ORCID,Li Jiahao1ORCID,Lin Xiongfeng3ORCID,Guo Yulin3,Liang Wenlin3,Wu Longjia3,Niu Quan1ORCID,Ma Yuguang1ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology 1 , 510006 Guangzhou, China

2. Max Planck Institute for Polymer Research 2 , 55128 Mainz, Germany

3. TCL Corporate Research 3 , 518067 Shenzhen, China

Abstract

Limited stability of blue quantum dot light-emitting diodes (QLEDs) under current stress impedes commercialization. Multi-layer structures of the state-of-the-art blue QLEDs pose significant difficulty in the fundamental understanding of degradation mechanisms. Here, by applying transient electroluminescence measurements, we disentangle charge transport in both pristine and degraded blue QLEDs. By varying thicknesses of the charge transport layers and the emissive layer, respectively, we show that the charge transport in pristine QLEDs is primarily dominated by holes. Furthermore, the degradation of QLEDs under electrical stress is governed by the decrease of hole transport in the emissive quantum dot layer due to the formation of hole traps.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Fundamental Research Funds for the Central Universities

Publisher

AIP Publishing

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