Use of ordered mesoporous SiO2 as protection against thermal disturbance in phase-change memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4801476
Reference14 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Electric field-induced filament formation in AsTeGe glass
3. Phase change memory technology
4. Fullerene thermal insulation for phase change memory
5. Superlatticelike dielectric as a thermal insulator for phase-change random access memory
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1. Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films;Journal of Materials Science;2022-01
2. Characterization of mesoporous silica thin films for application to thermal isolation layer;Thin Solid Films;2018-08
3. Effect of mesoporous structure on the Seebeck coefficient and electrical properties of SrTi 0.8 Nb 0.2 O 3;Applied Surface Science;2017-07
4. Thermal transport in amorphous materials: a review;Semiconductor Science and Technology;2016-10-06
5. The oxygen-deficiency-dependent Seebeck coefficient and electrical properties of mesoporous La0.7Sr0.3MnO3−x films;Journal of Materials Chemistry A;2016
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