Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119952
Reference12 articles.
1. Measurements on the photoconductive lifetime of carriers in GaAs by optoelectronic gating technique
2. Fast nonlinear optical response from proton‐bombarded multiple quantum well structures
3. Ultrafast carrier trapping in high energy ion implanted gallium arsenide
4. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
5. Carrier lifetime versus anneal in low temperature growth GaAs
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