Gate-controlled terahertz single electron photovoltaic effect in self-assembled InAs quantum dots-Reference-Cited by-同舟云学术

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Gate-controlled terahertz single electron photovoltaic effect in self-assembled InAs quantum dots

Published:2015-09-07 Issue:10 Volume:107 Page:103103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Y.¹,Shibata K.¹²,Nagai N.¹,Ndebeka-Bandou C.¹³,Bastard G.¹³,Hirakawa K.¹²^ORCID

Affiliation:

1. Center for Photonics Electronics Convergence, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

2. Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

3. Laboratoire Pierre Aigrain, Ecole Normale Superieure, 24 rue Lhomond, F75005 Paris, France

Funder

Canon Foundation in Europe

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Core Research for Evolutional Science and Technology, Japan Science and Technology Agency (CREST, JST)

Casio Science Promotion Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930023

Reference20 articles.

1. Artificial Atoms

2. Electrons in artificial atoms

3. Epitaxially Self-Assembled Quantum Dots

4. The single-electron transistor

5. Shell Filling and Spin Effects in a Few Electron Quantum Dot

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