Low-temperature preparation and electrical properties of CaBi2Nb2O9 piezoelectric ceramic by addition of B2O3

Author:

Pan C. B.12ORCID,Zhao G. C.12,Li S. M.12,Wang X. L.12,Wang J. M. Z.12,Tao M.12,Yin L. H.1ORCID,Song W. H.1ORCID,Zhu X. B.1ORCID,Yang J.1ORCID,Sun Y. P.134ORCID

Affiliation:

1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China

2. Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, People's Republic of China

3. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China

4. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China

Abstract

CaBi2Nb2O9 ceramics were fabricated via the solid-state reaction method by the addition of B2O3 as a sintering aid at lower sintering temperatures than that prepared without B2O3. Ferroelectricity, piezoelectricity, and resistivity can be still greatly enhanced when the sintering temperature is decreased from 1075 °C for CaBi2Nb2O9 to 975 °C for CaBi2Nb2O9–0.25 wt. % B2O3. The high resistivity and weak c-axis texture ensure that the ceramics can be fully polarized in a high enough electric field. The increased spontaneous ferroelectric and remanent polarization result in a significant enhancement in the piezoelectric properties of CaBi2Nb2O9–0.25 wt. % B2O3. The sample sintered at 975 °C possesses a high piezoelectric coefficient d33 of ∼15.0 pC/N and resistivity of 1.4 × 106 Ω cm (at 600 °C) along with a high ferroelectric Curie temperature TC of ∼954 °C. This work is beneficial for the preparation of high-temperature piezoelectric ceramics with excellent electrical properties at a low sintering temperature.

Funder

Jie Yang

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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