Structural origin of the 5.16 eV optical absorption band in silica and Ge‐doped silica
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111891
Reference20 articles.
1. Ion-Implantation Effects in Noncrystalline SiO2
2. Correlation of the 5.0- and 7.6-eV absorption bands inSiO2with oxygen vacancy
3. Theory of defects in vitreous silicon dioxide
4. Semiempirical calculations of point defects in silica. Oxygen vacancy and twofold coordinated silicon atom
5. Two types of oxygen-deficient centers in synthetic silica glass
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