Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors
Author:
Affiliation:
1. imec, Kapeldreef 75, B-3001 Heverlee, Belgium
2. Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Heverlee, Belgium
3. Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5043543
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1. A Review of Sharp-Switching Devices for Ultra-Low Power Applications
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1. Self-Oscillated Growth Formation of Standing Ultrathin Nanosheets out of Uniform Ge/Si Superlattice Nanowires;Chinese Physics Letters;2023-06-01
2. GNRFET with superlattice source, channel, and drain: SLSCD-GNRFET;Physica E: Low-dimensional Systems and Nanostructures;2021-07
3. Using Superlattice Structure in the Source of GNRFET to Improve Its Switching Performance;IEEE Transactions on Electron Devices;2020-03
4. Theoretical Bounds on Electron Energy Filtering in Disordered Nanomaterials;Nano Letters;2019-10-31
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