Low temperature (<400°C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2711290
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1. Low-Temperature Deposition of Hafnium Silicate Gate Dielectrics
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