SHALLOW LEVEL TRAPPING AND DETRAPPING IN Si(Li) DETECTORS AT LOW TEMPERATURES
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652693
Reference5 articles.
1. Drift and Conductivity Mobility in Silicon
2. Experimental results on the drift velocity of hot carriers in silicon and associated anisotropic effects
3. Electrons and holes drift velocity in silicon at very low temperature
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1. Time-of-Flight Techniques;Physics of Nonlinear Transport in Semiconductors;1980
2. Spectrometry with Solid-State Detectors;Experimental Approaches and Applications;1975
3. Drift Velocity and Trapping in Semiconductors—Transient Charge Technique;Applied Solid State Science;1972
4. Negative differential mobility in III–V and II–VI semiconducting compounds;La Rivista Del Nuovo Cimento;1971-10
5. Photoconductivity in p‐Type Silicon Irradiated with 1.2‐MeV Electrons at ∼15°K;Journal of Applied Physics;1971-05
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