High temperature operation of GaInAsSb/AlGaAsSb double‐heterostructure lasers emitting near 2.1 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112249
Reference13 articles.
1. Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
2. Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm
3. Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy
4. High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu m
5. Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE
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