Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1418449
Reference14 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. N incorporation in InP and band gap bowing of InNxP1−x
4. Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
5. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
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1. Metal–organic molecular beam epitaxy of GaAsNSe films using Ga droplets on GaP(001);Japanese Journal of Applied Physics;2016-07-15
2. Transport properties of Andreev polarons in a superconductor–semiconductor–superconductor junction with superlattice structure;Physica C: Superconductivity;2012-09
3. Novel Composite Particles in Superconductor-Semiconductor-Superconductor Junction;Advanced Materials;2011-10-17
4. Transport Properties of Andreev Polarons in a Superconductor-Semiconductor-Superconductor Junction with Superlattice Structure;Physical Review Letters;2011-04-13
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