Effects of excess silicon on the 1540 nm Er3+ luminescence in silicon rich oxynitride films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818130
Reference20 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Erbium implanted thin film photonic materials
3. Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide
4. Population inversion and low cooperative upconversion in Er-doped silicon-rich silicon nitride waveguide
5. Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures
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