Effect of strain and temperature on anomalously large interdiffusion in InAsP/InP heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119187
Reference17 articles.
1. Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure
2. X‐ray crystal truncation rod scattering measurement of AsH3‐exposed InP/InPAs/InP single heterostructures
3. Island growth, strain, and interdiffusion in InAs1−xPx/InP heterostructures
4. Strain Effects on Interdiffusion in InAs1-xPx/InP Heterostructures
5. Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure
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1. Investigations on the Effect of Arsenic and Phosphorus Atomic Exchange on the Origin of Crystal Potential Fluctuations in Inasp/Inp Epilayers;2024
2. Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots;Applied Physics Letters;2001-01-22
3. Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots;Journal of Crystal Growth;1998-12
4. Melting Induced by Epitaxial Stress;Japanese Journal of Applied Physics;1998-05-15
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