A quantitative model for an interaction between extended dislocation loops and impurities in Czochralski silicon based upon the photoluminescence analysis-Reference-Cited by-同舟云学术

A quantitative model for an interaction between extended dislocation loops and impurities in Czochralski silicon based upon the photoluminescence analysis

Published:1991-09-15 Issue:6 Volume:70 Page:3018-3024
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wijaranakula W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.349332

Reference15 articles.

1. A characterization of theP/P+epitaxial and substrate interface using the pulsed metal‐oxide‐semiconductor capacitance‐time transient analysis

2. Effects of Heat‐Treatments on Electrical Properties of Boron‐Doped Silicon Crystals

3. Mechanism of internal gettering of interstitial impurities in Czochralski-grown silicon

4. Gettering mechanisms in silicon

5. Gettering in silicon

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