Properties of interface states at Ta2O5/n-Si interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368032
Reference13 articles.
1. Thin-Film Electroluminescent Device Employing Ta2O5RF Sputtered Insulating Film
2. ZnS:Mn Thin Film Electroluminescent Devices Having Doubly-Stacked Insulating Layers
3. Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memory
4. Interaction of reactively sputtered TaOxthin films with In‐Sn‐O thin films and properties of TaOxthin films
5. Preparation and Properties of Ta2 O 5 Films by LPCVD for ULSI Application
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