Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves-Reference-Cited by-同舟云学术

Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves

Published:2020-09-01 Issue:9 Volume:10 Page:095021
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yamashita N.¹^ORCID,Lee S.¹^ORCID,Ohshima R.¹^ORCID,Shigematsu E.¹,Koike H.²,Suzuki Y.³^ORCID,Miwa S.³^ORCID,Goto M.³^ORCID,Ando Y.¹,Shiraishi M.¹^ORCID

Affiliation:

1. Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan

2. Advanced Products Development Center, TDK Corporation, Ichikawa, Chiba 272-8558, Japan

3. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0022160

Reference38 articles.

1. Coherent Spin Transport through a 350 Micron Thick Silicon Wafer

2. Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

3. Electronic measurement and control of spin transport in silicon

4. Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact

5. Spin drift in highly doped n-type Si

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