Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump–probe spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1602569
Reference20 articles.
1. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect
2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
3. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
4. Annealing studies of low‐temperature‐grown GaAs:Be
5. Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies
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