Crystallization of amorphous silicon on silica by cw laser irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93030
Reference10 articles.
1. Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators
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3. Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrate
4. cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties
5. Thin film MOSFET’s fabricated in laser‐annealed polycrystalline silicon
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1. Parameterization of a-Si crystallization by continuous-wave green laser irradiation: from single spot to large area;Journal of Photonics for Energy;2015-11-24
2. Effects of grown‐in stress on the metastable solid solubility limits in Sb implanted Ge0.1Si0.9alloys;Applied Physics Letters;1993-10-11
3. Characterization of Polysilicon Films by Raman Spectroscopy and Transmission Electron Microscopy: a Comparative Study;MRS Proceedings;1993
4. Raman Spectroscopy for Nondestructive Depth Profile Studies of Ion Implantation in Silicon;Journal of The Electrochemical Society;1986-05-01
5. Zone-Melting Recrystallization of Si Films on SiO2;Silicon-on-Insulator;1985
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