Hafnium‐Silicon Schottky Barriers: Large Barrier Height on p‐Type Silicon and Ohmic Behavior on n‐Type Silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653826
Reference11 articles.
1. Carrier transport across metal-semiconductor barriers
2. Characteristics of aluminum-silicon schottky barrier diode
3. Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics
4. Forward current-voltage characteristics of Schottky barriers on n-type silicon
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