Towards monomaterial p-n junctions: Single-step fabrication of tin oxide films and their non-destructive characterisation by angle-dependent X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Towards monomaterial p-n junctions: Single-step fabrication of tin oxide films and their non-destructive characterisation by angle-dependent X-ray photoelectron spectroscopy

Published:2015-12-07 Issue:23 Volume:107 Page:231601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Krzywiecki Maciej¹²^ORCID,Sarfraz Adnan¹,Erbe Andreas¹

Affiliation:

1. Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Str. 1, 40237 Düsseldorf, Germany

2. Institute of Physics–CSE, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland

Funder

Polish Ministry of Science and Higher Education within Iuventus Plus programme

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4937003

Reference53 articles.

1. Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO2

2. Role of Proton Hopping in Surface Charge Transport on Tin Dioxide As Revealed by the Thermal Dependence of Conductance

3. Electronic Conduction in Oxides

4. Bipolar Conduction in SnO Thin Films

5. Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

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