Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane-Reference-Cited by-同舟云学术

Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane

Published:2018-08-06 Issue:6 Volume:113 Page:061110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Asel Thaddeus J.¹^ORCID,Yanchenko Eric¹^ORCID,Yang Xiao²,Jiang Shishi³,Krymowski Kevin⁴,Wang Yaxian⁴,Trout Amanda⁴⁵,McComb David W.⁴⁵,Windl Wolfgang⁴^ORCID,Goldberger Joshua E.³,Brillson Leonard J.¹²^ORCID

Affiliation:

1. Department of Physics, The Ohio State University, 191 W. Woodruff Avenue, Columbus, Ohio 43210, USA

2. Department of Electrical and Computer Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210, USA

3. Department of Chemistry and Biochemistry, The Ohio State University, 151 W. Woodruff Avenue, Columbus, Ohio 43210, USA

4. Department of Materials Science and Engineering, The Ohio State University, 2041 M. College Rd., Columbus, Ohio 43210, USA

5. Center for Electron Microscopy and Analysis, 1305 Kinnear Rd., Suite 100, Columbus, Ohio 43212, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5034460

Reference38 articles.

1. Stability and Exfoliation of Germanane: A Germanium Graphane Analogue

2. A first principles method to simulate electron mobilities in 2D materials

3. Water activated doping and transport in multilayered germanane crystals

4. Electronic properties of germanane field-effect transistors

5. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

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