2 ps InGaAs photoconductors and their speed‐of‐response evaluation by optical pulse mixing at inherent nonlinearities
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99556
Reference5 articles.
1. 100 GHz bandwidth planar GaAs Schottky photodiode
2. High‐speed, hybrid InGaAsp‐i‐n/photoconductor circuit
3. Picosecond optical mixing in fast photodetectors
4. High speed, ion bombarded InGaAs photoconductors
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1. Limitation of a giant amplification surge by photoinduced space charge accompanying an increase in the concentration of recombination centers in intrinsic threshold photoresistors with extracting contacts;Technical Physics Letters;1999-03
2. Increasing the concentration of recombination impurities as a means to suppress the amplification saturation effect in intrinsic threshold photoresistors with extracting contacts and impurity recombination of photo-generated carriers;Technical Physics Letters;1997-01
3. Optical pulse mixing measurement of carrier lifetime and absorption recovery time in reverse‐biased GaAs/AlGaAs single quantum well laser structures;Journal of Applied Physics;1994-12-15
4. Ultrafast Response Evaluation of Virtual Excitation by Off-Resonant Optical Pulse Mixing in GaAs/AlGaAs Quantum Well Structures;Japanese Journal of Applied Physics;1990-11-20
5. Beryllium bombardment for In0.53Gao0.47As and InP photoconductors with picosecond response times;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-04
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