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High-efficiency AlGaInP solar cells grown by molecular beam epitaxy

Published:2016-10-24 Issue:17 Volume:109 Page:172105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Faucher J.¹,Sun Y.¹,Jung D.¹^ORCID,Martin D.²,Masuda T.¹^ORCID,Lee M. L.¹³

Affiliation:

1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA

2. Área de Tecnología Electrónica, Universidad Rey Juan Carlos, 28933 Móstoles, Madrid, Spain

3. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

Funder

NSF | Yale Institute for Nanoscience and Quantum Engineering

Spanish Ministerio de Educacion, Cultura y Deporte | Jose Castillejo program

Advanced Research Projects Agency - Energy (ARPA-E)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4965979

Reference20 articles.

1. Solar cell efficiency tables (Version 45)

2. Wafer bonded 4-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells

3. Design Flexibility of Ultrahigh Efficiency Four-Junction Inverted Metamorphic Solar Cells

4. Solar cell generations over 40% efficiency

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2. Metamorphic and Lattice-Matched GaInP Rear-Heterojunction Solar Cells for Improved Performance at Elevated Temperatures;IEEE Journal of Photovoltaics;2024-07

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4. Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy;Journal of Applied Physics;2023-03-09

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