Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3457864
Reference31 articles.
1. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure
2. Visible photoluminescence of Ge microcrystals embedded in SiO2glassy matrices
3. Luminescent nanostructures based on Ge nanoparticles embedded in an oxide matrix
4. Visible photoluminescence from nanocrystalline Ge formed by H2reduction of Si0.6Ge0.4O2
5. Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures
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1. Size- and position-controlled Ge nanocrystals separated by high-k dielectrics;MRS Bulletin;2022-05-12
2. Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures;MRS Advances;2021-12-15
3. High-performance germanium quantum dot photodetectors: Response to continuous wave and pulsed excitation;Applied Physics Letters;2020-12-21
4. Ge Quantum Dots Coated with Metal Shells (Al, Ta, and Ti) Embedded in Alumina Thin Films for Solar Energy Conversion;ACS Applied Nano Materials;2020-08-28
5. Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix;Nanotechnology;2019-06-24
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