Dependence of tunneling magnetoresistance on ferromagnetic electrode thickness and on the thickness of a Cu layer inserted at the Al2O3/CoFe interface-Reference-Cited by-同舟云学术

Dependence of tunneling magnetoresistance on ferromagnetic electrode thickness and on the thickness of a Cu layer inserted at the Al2O3/CoFe interface

Published:1999-04-15 Issue:8 Volume:85 Page:5264-5266
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sun J. J.,Freitas P. P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369849

Reference14 articles.

1. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

2. Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)

3. Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)

4. Microstructured magnetic tunnel junctions (invited)

5. Tunneling magnetoresistance and current distribution effect in spin-dependent tunnel junctions

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