Thermally converted surface layers in semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89610
Reference8 articles.
1. Thermal degradation of homoepitaxial GaAs interfaces
2. Silicon‐Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site Distribution
3. On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique
4. Properties of vacancy defects in GaAs single crystals
5. A model relating electrical properties and impurity concentrations in semi‐insulating GaAs
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1. Effects of thermal annealing onn-type GaAs:V grown by MOCVD;Journal of Physics D: Applied Physics;2006-03-17
2. Process-induced defects in manufacture of GaAs monolithic microwave integrated circuits;Materials Science and Engineering: B;1994-12
3. Spin-on-glass as an Encapsulant for Annealing Si-Implanted GaAs;IETE Technical Review;1990-09
4. Diffusion of Iron into GaAs from a Spin‐on Source;Journal of The Electrochemical Society;1990-08-01
5. Photoluminescence investigation of the 1.356 eV band and stoichiometry in undoped GaAs;Journal of Applied Physics;1989-01-15
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