Effect of oxygen vacancies and strain on the phonon spectrum of HfO2 thin films-Reference-Cited by-同舟云学术

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Effect of oxygen vacancies and strain on the phonon spectrum of HfO2 thin films

Published:2017-06-14 Issue:22 Volume:121 Page:224101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gao Lingyuan¹,Yalon Eilam²^ORCID,Chew Annabel R.³,Deshmukh Sanchit²,Salleo Alberto³,Pop Eric²³^ORCID,Demkov Alexander A.¹

Affiliation:

1. Department of Physics, The University of Texas, Austin, Texas 78712, USA

2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

3. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

Funder

Division of Electrical, Communications and Cyber Systems (ECCS)

U.S. Department of Energy (DOE)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4984833

Reference53 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High dielectric constant oxides

3. A Thermodynamic Approach to Selecting Alternative Gate Dielectrics

4. Memristive devices for computing

5. Optical characterization of HfO2 thin films grown by atomic layer deposition

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1. Thermodynamic modeling of the Hf-Ta-O system for the design of oxidation resistant HfC-TaC ceramics;Open Ceramics;2024-09

2. Effect of number of sol-layer on structural, optical, morphological, and compositional properties of HfO2 films;Physica B: Condensed Matter;2024-02

3. Influence of Hf precursor concentration on various properties of sol-gel based spin coated HfO2 thin films;Optical Materials;2023-02

4. Demonstration of ferroelectricity in PLD grown HfO<sub>2</sub>-ZrO<sub>2</sub> nanolaminates;AIMS Materials Science;2023

5. Point defects in stoichiometric and nonstoichiometric metal oxides for modern microelectronics;Metal Oxide Defects;2023

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