Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures-Reference-Cited by-同舟云学术

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

Published:2016-08-28 Issue:8 Volume:120 Page:084305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Couto O. D. D.¹^ORCID,de Almeida P. T.¹,dos Santos G. E.¹,Balanta M. A. G.¹,Andriolo H. F.¹,Brum J. A.¹,Brasil M. J. S. P.¹,Iikawa F.¹,Liang B. L.²,Huffaker D. L.²

Affiliation:

1. Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo, Brazil

2. California NanoSystems Institute, UCLA, Los Angeles, California 90095, USA

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4961534

Reference39 articles.

1. Quantum computers

2. Semiconductor quantum light sources

3. 106years extrapolated hole storage time in GaSb∕AlAs quantum dots

4. 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

5. GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response

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