On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices
Author:
Affiliation:
1. Université Grenoble Alpes, CEA, Leti, Grenoble 38000, France
2. Université de Lyon, UJM-Saint-Etienne, CNRS, IOGS, Lab. Hubert Curien, UMR5516 St-Etienne, France
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0060429
Reference29 articles.
1. An optimized p-doped hole injection structure to improve the performance of organic light emitting diodes
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3. Correlation of open-circuit voltage and energy levels in zinc-phthalocyanine: C60bulk heterojunction solar cells with varied mixing ratio
4. Molecular doping of near-infrared organic photodetectors for photoplethysmogram sensors
5. Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
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