Spin-MEMS microphone integrating a series of magnetic tunnel junctions on a rectangular diaphragm
Author:
Affiliation:
1. Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
2. Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5023756
Reference27 articles.
1. Low frequency picotesla field detection using hybrid MgO based tunnel sensors
2. MgO Magnetic Tunnel Junction Electrical Current Sensor With Integrated Ru Thermal Sensor
3. Fabrication of Magnetic Tunnel Junctions with Amorphous CoFeSiB Ferromagnetic Electrode for Magnetic Field Sensor Devices
4. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
5. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
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3. Tunneling Magnetoresistance Transition and Highly Sensitive Pressure Sensors Based on Magnetic Tunnel Junctions with a Black Phosphorus Barrier;ACS Omega;2022-06-09
4. Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions;Scientific Reports;2021-07-12
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