High-performance photodetector based on quasi-two-dimensional Ruddlesden–Popper perovskite PEA2FA2Pb3Br10 film

Author:

Yang Jie1,Li Chen2ORCID,Wei Xiaoyan1,Huang Yexiong1,Wu Daofu3,Lai Jun'an3,Pi Mingyu4ORCID,Luo Linbao2ORCID,Tang Xiaosheng5

Affiliation:

1. College of Physics and Electronic Engineering, Chongqing Normal University 1 , Chongqing 401331, China

2. School of Electronic Science and Applied Physics, Hefei University of Technology 2 , Hefei, Anhui 230009, People's Republic of China

3. Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University 3 , Chongqing 400044, China

4. College of Engineering and Applied Sciences, Nanjing University 4 , Nanjing 210093, China

5. College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications 5 , Chongqing 400065, China

Abstract

For next-generation Internet-of-Everything applications, such as artificial neural-network image sensors, artificial retina, visible light communication, flexible devices, and so on, the photodetectors with excellent properties are urgently demanded. In recent years, two-dimensional (2D) material-based photodetectors have been developed and certified for remarkable performances. Nonetheless, it cannot meet the need of wide linear dynamic range, ultralow dark current, and large on/off ratio, which are critical factors for commercial applications. Recently, quasi-2D Ruddlesden–Popper (RP) perovskites are explored and developed as well-known photovoltaic and optoelectronic materials. Herein, an excellent photodetector based on quasi-2D RP layered perovskite PEA2FA2Pb3Br10 film was fabricated. The photodetector displays an ultralow dark current of 4.08 × 10−11 A, high specific detectivity of 1.69 × 1010 Jones, high on/off ratio of 7.33 × 103, and fast rise/fall times of 32/38 ms, attributed to its multiple quantum wells in PEA2FA2Pb3Br10. Therefore, the photodetectors based on quasi-2D RP perovskite PEA2FA2Pb3Br10 have immense potentials in the field of optoelectronics.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Chongqing Municipality

science and technology research program of chongqing municipal education commission

China Postdoctoral Science Foundation

chunhui plan cooperative scientific research project of the ministry of education of china

project of chongqing normal university foundation

Publisher

AIP Publishing

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