AlGaAs‐GaAs and AlGaAs‐GaAs‐InGaAs vertical cavity surface emitting lasers with Ag mirrors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343671
Reference8 articles.
1. GaInAsP/InP Surface Emitting Injection Lasers
2. Multilayer GaAs-Al_03Ga_07As dielectric quarter wave stacks grown by molecular beam epitaxy
3. High reflectivity GaAs‐AlGaAs mirrors fabricated by metalorganic chemical vapor deposition
4. Surface emitting laser diode with AlxGa1−xAs /GaAs multilayered heterostructure
5. Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells
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1. Theory of Metal-Cavity Surface-Emitting Microlasers and Comparison With Experiment;IEEE Journal of Selected Topics in Quantum Electronics;2011-11
2. Composition dependence of optical phonon properties and dielectric functions of group-III arsenide ternary and quaternary mixed crystals;Journal of Applied Physics;2003-06
3. InGaAs/GaAs vertical cavity surface emitting laser with hybrid top mirror;Microelectronic Engineering;1992-08
4. Growth and characterization of AlxGa1−xAs Bragg reflectors by LP-MOCVD;Journal of Electronic Materials;1992-03
5. Transparent conductive metal‐oxide contacts in vertical‐injection top‐emitting quantum well lasers;Applied Physics Letters;1991-02-25
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