Growth of high‐quality YBa2Cu3O7−x films on CeO2 buffer of mixed (001)/(111) orientation on sapphire-Reference-Cited by-同舟云学术

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Growth of high‐quality YBa2Cu3O7−x films on CeO2 buffer of mixed (001)/(111) orientation on sapphire

Published:1995-10-30 Issue:18 Volume:67 Page:2723-2725
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zaitsev A. G.,Kutzner R.,Wördenweber R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114305

Reference10 articles.

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Orientational control of CeO 2 films on sapphire substrates grown by magnetron sputtering;Journal of Crystal Growth;2017-06

2. Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

3. Thallium based high temperature superconductors for microwave device applications;Materials Science and Technology;2003-03

4. Change of crystal orientation of YBa2Cu3O7 thin films on CeO2/Al2O3;Applied Surface Science;2002-04

5. Growth of doped lanthanum manganite thin films on CeO2 buffer layer and their properties;Journal of Alloys and Compounds;2001-08

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