Electrical properties of in-plane-implanted graphite nanoribbons-Reference-Cited by-同舟云学术

Electrical properties of in-plane-implanted graphite nanoribbons

Published:2017-12-28 Issue:24 Volume:122 Page:244302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Camargo B. C.¹²^ORCID,de Jesus R. F.³,Semenenko B. V.²,Precker C. E.²

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02-668 Warsaw, Poland

2. Division of Superconductivity and Magnetism, Felix Bloch Institute for Solid State Physics, Universitat Leipzig, Linnéstrasse 5, D-04103 Leipzig, Germany

3. Instituto Federal do Rio Grande do Sul, Campus Vacaria, 95200-000 Vacaria, RS, Brazil

Funder

Erasmus Mundus Webb

Narodowe Centrum Nauki

MCTI | Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4995223

Reference27 articles.

1. Length dependence of the resistance in graphite: Influence of ballistic transport

2. Observation of an electrically tunable band gap in trilayer graphene

3. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

4. Transition from Ohmic to ballistic transport in oriented graphite: Measurements and numerical simulations

5. The influence of Ga+irradiation on the transport properties of mesoscopic conducting thin films

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