Electronic properties of intrinsic vacancies in single-layer CaF2 and its heterostructure with monolayer MoS2
Author:
Affiliation:
1. Beijing Computational Science Research Center, Beijing 100193, China
2. Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey
Funder
China Postdoctoral Science Foundation
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0055044
Reference57 articles.
1. Size-dependent structure of MoS2 nanocrystals
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
4. Single-Layer MoS2 Phototransistors
5. On the mechanical behavior of WS2 nanotubes under axial tension and compression
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