Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications-Reference-Cited by-同舟云学术

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Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications

Published:1997-05-05 Issue:18 Volume:70 Page:2443-2445
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ashby Carol I. H.,Sullivan John P.,Newcomer Paula P.,Missert Nancy A.,Hou Hong Q.,Hammons B. E.,Hafich Michael J.,Baca Albert G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118897

Reference8 articles.

1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices

2. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs

3. Raman scattering from anodic oxide‐GaAs interfaces

4. Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaP

5. Microstructure of laterally oxidized AlxGa1−xAs layers in vertical‐cavity lasers

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1. AlGaOx nanowires obtained by wet oxidation as a visible white phosphor under UV-LED illumination;Japanese Journal of Applied Physics;2022-03-24

2. Quantum dot nonlinearity through cavity-enhanced feedback with a charge memory;Physical Review B;2015-06-25

3. Electrochemically Gated Alloy Formation of Crystalline InAs Thin Films at Room Temperature in Aqueous Electrolytes;Chemistry of Materials;2014-07-17

4. Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors;IEEE Journal of Quantum Electronics;2013-09

5. Oxidation of Al-bearing III-V materials: A review of key progress;Journal of Applied Physics;2013-02-07

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