Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching
Author:
Affiliation:
1. Institut für Festkörper und Nanostrukturphysik (INF), Jungiusstraße 11, D-20355 Hamburg, Germany
2. School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4934218
Reference27 articles.
1. Vapor pressures and phase equilibria in the GaAs system
2. The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique
3. Congruent evaporation temperature of GaAs(001) controlled by As flux
4. Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs
5. J. Y. Tsao , Materials Fundamentals of Molecular Beam Epitaxy ( Academic, San Diego, 1993), p. 733.
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