Effect of coincident ion bombardment on the oxidation of Si (100) by atomic oxygen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102352
Reference13 articles.
1. Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma‐enhanced CVD: Applications to semiconductors
2. Phenomena produced by ion bombardment in plasma‐assisted etching environments
3. Kinetics of the adsorption of O2 and of the desorption of SiO on Si(100): A molecular beam, XPS, and ISS study
4. Development of a supersonic O(3PJ), O(1D2) atomic oxygen nozzle beam source
5. Reactive atom–surface scattering: The adsorption and reaction of atomic oxygen on the Si(100) surface
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3. Ultrathin Oxide Film Formation Using Radical Oxygen in an Ultrahigh Vacuum System;Japanese Journal of Applied Physics;1999-09-15
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