Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2containing small amounts of trichloroethane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99397
Reference7 articles.
1. Neutralization of Na+ Ions in ``HCl‐Grown'' SiO2
2. Use of HCl Gettering in Silicon Device Processing
3. Dielectric Breakdown Properties of SiO2 Films Grown in Halogen and Hydrogen‐Containing Environments
4. Effects of HCL gettering, CR doping and AL+ implantation on hardened SiO2
5. Hot‐electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate‐induced strain
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