Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal–ferroelectric–metal assistance cell
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592606
Reference22 articles.
1. Memories are made of …
2. 256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V
3. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
4. Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO 2 /Pb(Zr 0.52 Ti 0.48 )O 3 Heterostructures
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