Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime

Author:

Buscemi Fabrizio1,Piccinini Enrico2,Brunetti Rossella1,Rudan Massimo2,Jacoboni Carlo1

Affiliation:

1. Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via Campi 213/A, I-41125 Modena, Italy

2. Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione “Guglielmo Marconi,” Università di Bologna, Viale Risorgimento 2, I-40136 Bologna, Italy

Funder

Intel Corporation (Intel)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Charge Transport Models for Amorphous Chalcogenides;Springer Handbook of Semiconductor Devices;2022-11-11

2. Phase-Change Memories;Springer Handbook of Semiconductor Devices;2022-11-11

3. An overview of phase-change memory device physics;Journal of Physics D: Applied Physics;2020-03-30

4. Band transport and localised states in modelling the electric switching of chalcogenide materials;Journal of Computational Electronics;2019-10-29

5. Transport Scaling Limits of Ovonic Devices: a Simulative Approach;Journal of Physics: Conference Series;2017-10

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