High-bandwidth Si/In2O3 hybrid plasmonic waveguide modulator

Abstract

A novel Si/In2O3 hybrid plasmonic waveguide modulator was experimentally realized by using an asymmetric directional coupler (ADC), which consists of a silicon photonic waveguide and a Si/In2O3 hybrid plasmonic waveguide. All the silicon cores are covered with a silica layer, above which there is a metal–oxide–semiconductor (MOS) capacitor consisting of the In2O3/HfO2/Au layers. The Au layer sitting on the top of the MOS capacitor works as the top-electrode, while the In2O3 thin film covers the sidewall and contacts with the Au bottom-electrode. When the bias voltage is not applied, light launched from the silicon photonic waveguide is weakly coupled into the Si/In2O3 hybrid plasmonic waveguide, and thus, one has a high transmission at the through port of the ADC. On the other hand, when the bias voltage is applied, the carrier density in the In2O3 layer is changed, which introduces some modification to the refractive index of the In2O3 thin film. As a result, light is strongly cross-coupled from the silicon photonic waveguide to a Si/In2O3 hybrid plasmonic waveguide, and one has low transmission at the through port. In this Letter, an ultra-compact Si/In2O3 hybrid plasmonic waveguide modulator is realized with a 3.5- μm-long ADC. In the experiments, the fabricated waveguide modulator works well and exhibits a high modulation bandwidth of >40 GHz for the first time.